Single-layer MoS 2 phototransistors

Zongyou Yin; Hai Li; Hong Li; Lin Jiang; Yumeng Shi; Yinghui Sun; Gang Lu; Qing Zhang; Xiaodong Chen; Hua Zhang

doi:10.1021/nn2024557

Single-layer MoS ₂ phototransistors

Zongyou Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang

Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

3300 引用（Scopus）

摘要

A new phototransistor based on the mechanically exfoliated single-layer MoS ₂ nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS ₂ phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS ₂ phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

源语言	英语
页（从-至）	74-80
页数	7
期刊	ACS Nano
卷	6
期	1
DOI	https://doi.org/10.1021/nn2024557
出版状态	已出版 - 24 1月 2012
已对外发布	是

访问文件

10.1021/nn2024557

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{7d379bec5cca4e779e42f8353a0389ec,

title = "Single-layer MoS 2 phototransistors",

abstract = "A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.",

keywords = "MoS, photocurrent, photoresponsivity, photoswitching, phototransistors, single-layer",

author = "Zongyou Yin and Hai Li and Hong Li and Lin Jiang and Yumeng Shi and Yinghui Sun and Gang Lu and Qing Zhang and Xiaodong Chen and Hua Zhang",

year = "2012",

month = jan,

day = "24",

doi = "10.1021/nn2024557",

language = "英语",

volume = "6",

pages = "74--80",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Single-layer MoS 2 phototransistors

AU - Yin, Zongyou

AU - Li, Hai

AU - Li, Hong

AU - Jiang, Lin

AU - Shi, Yumeng

AU - Sun, Yinghui

AU - Lu, Gang

AU - Zhang, Qing

AU - Chen, Xiaodong

AU - Zhang, Hua

PY - 2012/1/24

Y1 - 2012/1/24

N2 - A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

AB - A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

KW - MoS

KW - photocurrent

KW - photoresponsivity

KW - photoswitching

KW - phototransistors

KW - single-layer

UR - http://www.scopus.com/inward/record.url?scp=84856170872&partnerID=8YFLogxK

U2 - 10.1021/nn2024557

DO - 10.1021/nn2024557

M3 - 文章

C2 - 22165908

AN - SCOPUS:84856170872

SN - 1936-0851

VL - 6

SP - 74

EP - 80

JO - ACS Nano

JF - ACS Nano

IS - 1

ER -

Single-layer MoS 2 phototransistors

摘要

访问文件

其它文件与链接

指纹

引用此

Single-layer MoS ₂ phototransistors