Single-layer semiconducting nanosheets: High-yield preparation and device fabrication

Zhiyuan Zeng; Zongyou Yin; Xiao Huang; Hai Li; Qiyuan He; Gang Lu; Freddy Boey; Hua Zhang

doi:10.1002/anie.201106004

Single-layer semiconducting nanosheets: High-yield preparation and device fabrication

Zhiyuan Zeng, Zongyou Yin, Xiao Huang, Hai Li, Qiyuan He, Gang Lu, Freddy Boey, Hua Zhang

Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

1725 引用（Scopus）

摘要

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS ₂, WS₂, TiS₂, TaS₂, ZrS₂, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS₂ was achieved in 92 % yield. A single-layer MoS₂-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.

源语言	英语
页（从-至）	11093-11097
页数	5
期刊	Angewandte Chemie - International Edition
卷	50
期	47
DOI	https://doi.org/10.1002/anie.201106004
出版状态	已出版 - 18 11月 2011
已对外发布	是

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abstract = "Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.",

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author = "Zhiyuan Zeng and Zongyou Yin and Xiao Huang and Hai Li and Qiyuan He and Gang Lu and Freddy Boey and Hua Zhang",

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T1 - Single-layer semiconducting nanosheets

T2 - High-yield preparation and device fabrication

AU - Zeng, Zhiyuan

AU - Yin, Zongyou

AU - Huang, Xiao

AU - Li, Hai

AU - He, Qiyuan

AU - Lu, Gang

AU - Boey, Freddy

AU - Zhang, Hua

PY - 2011/11/18

Y1 - 2011/11/18

N2 - Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.

AB - Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.

KW - electrochemistry

KW - nanomaterials

KW - nanosheets

KW - semiconductors

KW - sensors

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JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

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Single-layer semiconducting nanosheets: High-yield preparation and device fabrication

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