Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Xin He; Hai Li; Zhiyong Zhu; Zhenyu Dai; Yang Yang; Peng Yang; Qiang Zhang; Peng Li; Udo Schwingenschlogl; Xixiang Zhang

doi:10.1063/1.4966218

Strain engineering in monolayer WS₂, MoS₂, and the WS₂/MoS₂ heterostructure

Xin He, Hai Li, Zhiyong Zhu, Zhenyu Dai, Yang Yang, Peng Yang, Qiang Zhang, Peng Li, Udo Schwingenschlogl, Xixiang Zhang

柔性电子（未来科技）学院|先进材料研究院

科研成果: 期刊稿件 › 文章 › 同行评审

170 引用（Scopus）

摘要

Mechanically exfoliated monolayers of WS₂, MoS₂ and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS₂ and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

源语言	英语
文章编号	173105
期刊	Applied Physics Letters
卷	109
期	17
DOI	https://doi.org/10.1063/1.4966218
出版状态	已出版 - 24 10月 2016

访问文件

10.1063/1.4966218

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{c1dd1924b5fb43b5b10783fc3353c9df,

title = "Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure",

abstract = "Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.",

author = "Xin He and Hai Li and Zhiyong Zhu and Zhenyu Dai and Yang Yang and Peng Yang and Qiang Zhang and Peng Li and Udo Schwingenschlogl and Xixiang Zhang",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = oct,

day = "24",

doi = "10.1063/1.4966218",

language = "英语",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

AU - He, Xin

AU - Li, Hai

AU - Zhu, Zhiyong

AU - Dai, Zhenyu

AU - Yang, Yang

AU - Yang, Peng

AU - Zhang, Qiang

AU - Li, Peng

AU - Schwingenschlogl, Udo

AU - Zhang, Xixiang

PY - 2016/10/24

Y1 - 2016/10/24

N2 - Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

AB - Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=84993961085&partnerID=8YFLogxK

U2 - 10.1063/1.4966218

DO - 10.1063/1.4966218

M3 - 文章

AN - SCOPUS:84993961085

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173105

ER -

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

摘要

访问文件

其它文件与链接

指纹

引用此

Strain engineering in monolayer WS₂, MoS₂, and the WS₂/MoS₂ heterostructure