摘要
The electronic structures and optical properties of ZnS and ZnS:Er have been studied using the first-principles plane-wave pseudopotential method. The calculations show that the bandgap of ZnS:Er becomes narrow in the case of Er 3+-doping and a new intermediate band between valence band and conduction band is presented. Moreover, with the Er 3+ concentration increasing, the insulativity of ZnS:Er presents a decreasing trend, and the absorption spectra exhibit a red-shift, which are in agreement with the previous experimental results.
源语言 | 英语 |
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页(从-至) | 1913-1919 |
页数 | 7 |
期刊 | Guangdianzi Jiguang/Journal of Optoelectronics Laser |
卷 | 23 |
期 | 10 |
出版状态 | 已出版 - 10月 2012 |
已对外发布 | 是 |