TY - JOUR
T1 - Templating C60 on MoS2 Nanosheets for 2D Hybrid van der Waals p-n Nanoheterojunctions
AU - Chen, Runfeng
AU - Lin, Cheng
AU - Yu, Huan
AU - Tang, Yuting
AU - Song, Chao
AU - Yuwen, Lihui
AU - Li, Hai
AU - Xie, Xiaoji
AU - Wang, Lianhui
AU - Huang, Wei
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/6/28
Y1 - 2016/6/28
N2 - C60 and single-layer MoS2 nanocomposites were facilely prepared via a combined solvent transfer and surface deposition (STSD) method by templating C60 aggregates on 2D MoS2 nanosheets to construct hybrid van der Waals heterojunctions. The electronic property of the hybrid nanomaterials was investigated in a direct charge transport diode device configuration of ITO/C60-MoS2 nanocomposites/Al; rewritable nonvolatile resistive switching with low SET/RESET voltage (∼3 V), high ON/OFF resistance ratio (∼4 × 103), and superior electrical bistability (>104 s) of a flash memory behavior was observed. This particular electrical property of C60-MoS2 nanocomposites, not possessed by either C60 or MoS2 nanosheets, was supposed to be due to the efficiently established C60/MoS2 p-n nanojunction, which controls the electron tunneling via junction barriers modulated by electric-field-induced polarization. Thus, our 2D templating method through STSD is promising to massively allocate van der Waals p-n heterojunctions in 2D nanocomposites, opening a window for important insights into the charge transport across the interface of organic/2D-semiconductors.
AB - C60 and single-layer MoS2 nanocomposites were facilely prepared via a combined solvent transfer and surface deposition (STSD) method by templating C60 aggregates on 2D MoS2 nanosheets to construct hybrid van der Waals heterojunctions. The electronic property of the hybrid nanomaterials was investigated in a direct charge transport diode device configuration of ITO/C60-MoS2 nanocomposites/Al; rewritable nonvolatile resistive switching with low SET/RESET voltage (∼3 V), high ON/OFF resistance ratio (∼4 × 103), and superior electrical bistability (>104 s) of a flash memory behavior was observed. This particular electrical property of C60-MoS2 nanocomposites, not possessed by either C60 or MoS2 nanosheets, was supposed to be due to the efficiently established C60/MoS2 p-n nanojunction, which controls the electron tunneling via junction barriers modulated by electric-field-induced polarization. Thus, our 2D templating method through STSD is promising to massively allocate van der Waals p-n heterojunctions in 2D nanocomposites, opening a window for important insights into the charge transport across the interface of organic/2D-semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=84976563808&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.6b01115
DO - 10.1021/acs.chemmater.6b01115
M3 - 文章
AN - SCOPUS:84976563808
SN - 0897-4756
VL - 28
SP - 4300
EP - 4306
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 12
ER -