摘要
In excellent agreement with experiments, high levels ab initio MO calculations of the multireference CI (MRD-CI) and complete active space SCF (CASSCF) type show a deep potential well for the X2Σ + ground state of the diatomic SiH2+ dication with a barrier of 1.06 eV (CASSCF) and 1.07 eV (MRD-CI) for the charge separation reaction. This result, which is in distinct contrast to the findings for the valence isoelectronic CH2+ dication, is explained by the charge polarization character of the SIH2+ ground state. Also the first excited A 2Π state was found by MRD-CI to be weakly bound.
源语言 | 英语 |
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页(从-至) | 2703-2706 |
页数 | 4 |
期刊 | Journal of Chemical Physics |
卷 | 84 |
期 | 5 |
DOI | |
出版状态 | 已出版 - 1985 |
已对外发布 | 是 |