Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe₂P₄-Metal Contacts

The MoGe₂P₄ monolayer, an emerging semiconductor with high carrier mobility, can be proposed as a promising channel material in field effect transistors (FETs). The contact resistance between MoGe₂P₄ and the metal electrode will limit the performance of a realistic FET. Using density functional theory (DFT) calculations, we explore the contact properties of a MoGe₂P₄ monolayer with six bulk metal electrodes (In, Ag, Au, Cu, Pd, and Pt). It is demonstrated that the Ohmic contacts are formed in all MoGe₂P₄-metal contacts due to the strong interfacial interactions, suggesting the high carrier injection efficiency. In addition, the MoGe₂P₄-Cu, −Pd, and −Pt contacts present 100% tunneling probability due to the absence of the tunneling barrier width. The tunneling probabilities of the MGP-In, MGP-Ag, and MGP-Au contacts are exceptionally higher than those of most other 2D semiconductors. Moreover, the tunneling-specific resistivity of all MoGe₂P₄-metal contacts is relatively low, indicating an ultralow contact resistance and excellent performance. These findings provide a useful guideline to design high-performance MoGe₂P₄-based electronic devices.