TY - JOUR
T1 - 不同电源激励下共面介质阻挡放电特性实验
AU - Shi, Yaowei
AU - Zhou, Ruoyu
AU - Cui, Xinglei
AU - Wang, Lifeng
AU - Fang, Zhi
N1 - Publisher Copyright:
© 2018, Electrical Technology Press Co. Ltd. All right reserved.
PY - 2018/11/25
Y1 - 2018/11/25
N2 - For deeply exploring the characteristics of coplanar dielectric barrier discharge (CDBD) and thus to make reference for optimizing the design of plasma sources, the influence of the driven power supplies on characteristics of CDBD was investigated in this paper. The discharge characteristics of CDBD driven by high frequency alternating-current (AC) supply, microsecond (μs) pulse supply and nanosecond (ns) pulse supply were compared, and the influence of driven power supplies on discharge uniformity, active species densities, energy efficiency and the operating temperature of the reactor were analyzed. The results show that, compared with μs-pulse CDBD and high frequency AC CDBD, ns-pulse CDBD shows the best uniformity, the highest densities of active species and the lowest stable operation temperature of the reactor. When the frequency of the power supplies is kept at 5kHz, and the peak-to-peak voltage of high frequency AC supply is 20kV and the peak voltage of μs-pulse supply and ns-pulse supply is 15kV. The stable temperature of the reactor does not exceed 100℃ driven by ns-pulse supply, while the reactor temperature reaches 145℃ driven by high frequency AC power supply, which brings higher requirement of heat-resistant ability of the barrier material. During the same excitation period, the average power consumption of CDBD excited by ns-pulse supply is the lowest and its energy efficiency is the highest. Energy efficiency of CDBD excited by ns-pulse supply reaches 63.1%, remarkably higher than 38.6% excited by ms-pulse supply and 21.8% excited by high frequency AC supply. Therefore, in applications of CDBD, the purpose of reducing reactor temperature and increasing energy efficiency can be achieved by using the ns-pulse supply as the power supply.
AB - For deeply exploring the characteristics of coplanar dielectric barrier discharge (CDBD) and thus to make reference for optimizing the design of plasma sources, the influence of the driven power supplies on characteristics of CDBD was investigated in this paper. The discharge characteristics of CDBD driven by high frequency alternating-current (AC) supply, microsecond (μs) pulse supply and nanosecond (ns) pulse supply were compared, and the influence of driven power supplies on discharge uniformity, active species densities, energy efficiency and the operating temperature of the reactor were analyzed. The results show that, compared with μs-pulse CDBD and high frequency AC CDBD, ns-pulse CDBD shows the best uniformity, the highest densities of active species and the lowest stable operation temperature of the reactor. When the frequency of the power supplies is kept at 5kHz, and the peak-to-peak voltage of high frequency AC supply is 20kV and the peak voltage of μs-pulse supply and ns-pulse supply is 15kV. The stable temperature of the reactor does not exceed 100℃ driven by ns-pulse supply, while the reactor temperature reaches 145℃ driven by high frequency AC power supply, which brings higher requirement of heat-resistant ability of the barrier material. During the same excitation period, the average power consumption of CDBD excited by ns-pulse supply is the lowest and its energy efficiency is the highest. Energy efficiency of CDBD excited by ns-pulse supply reaches 63.1%, remarkably higher than 38.6% excited by ms-pulse supply and 21.8% excited by high frequency AC supply. Therefore, in applications of CDBD, the purpose of reducing reactor temperature and increasing energy efficiency can be achieved by using the ns-pulse supply as the power supply.
KW - Coplanar dielectric barrier discharge (CDBD)
KW - Discharge characteristics
KW - Energy efficiency
KW - Equivalent circuit
KW - High frequency alternating-current
KW - Ns pulse
KW - Μs pulse
UR - http://www.scopus.com/inward/record.url?scp=85058804048&partnerID=8YFLogxK
U2 - 10.19595/j.cnki.1000-6753.tces.171357
DO - 10.19595/j.cnki.1000-6753.tces.171357
M3 - 文章
AN - SCOPUS:85058804048
SN - 1000-6753
VL - 33
SP - 5371
EP - 5380
JO - Diangong Jishu Xuebao/Transactions of China Electrotechnical Society
JF - Diangong Jishu Xuebao/Transactions of China Electrotechnical Society
IS - 22
ER -