A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Jingjing Chang; Jinjun Shao; Jie Zhang; Jishan Wu; Chunyan Chi

doi:10.1039/c3ra40504d

A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Jingjing Chang, Jinjun Shao, Jie Zhang, Jishan Wu, Chunyan Chi

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm² V^-1 s^-1 and a high on-off current ratio of 10 ⁵-10⁶. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dV_OUT/dV _IN) of 64.

Original language	English
Pages (from-to)	6775-6778
Number of pages	4
Journal	RSC Advances
Volume	3
Issue number	19
DOIs	https://doi.org/10.1039/c3ra40504d
State	Published - 21 May 2013
Externally published	Yes

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abstract = "A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64.",

author = "Jingjing Chang and Jinjun Shao and Jie Zhang and Jishan Wu and Chunyan Chi",

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T1 - A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

AU - Chang, Jingjing

AU - Shao, Jinjun

AU - Zhang, Jie

AU - Wu, Jishan

AU - Chi, Chunyan

PY - 2013/5/21

Y1 - 2013/5/21

N2 - A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64.

AB - A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64.

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SN - 2046-2069

VL - 3

SP - 6775

EP - 6778

JO - RSC Advances

JF - RSC Advances

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ER -

A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

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