TY - JOUR
T1 - C−H Direct Arylated 6H-Indolo[2,3-b]quinoxaline Derivative as a Thickness-Dependent Hole-Injection Layer
AU - Dong, Dai
AU - Fang, Da
AU - Li, Hairong
AU - Zhu, Caixia
AU - Zhao, Xianghua
AU - Li, Jiewei
AU - Jin, Lingzhi
AU - Xie, Linghai
AU - Chen, Lin
AU - Zhao, Jianfeng
AU - Zhang, Hongmei
AU - Huang, Wei
N1 - Publisher Copyright:
© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/4/18
Y1 - 2017/4/18
N2 - A novel perfluoro-1,4-phenylenyl 6H-indolo[2,3-b]quinoxaline derivative (TFBIQ) was designed and synthesized by using a C−H direct arylation method. The optoelectrical properties of the obtained TFBIQ were fully characterized by UV/Vis spectroscopy, photoluminescence spectroscopy, cyclic voltammetry, and a group of Alq3-based green organic light-emitting diodes (OLEDs). Device A, which used 0.5 nm-thick TFBIQ as the interfacial modification layer, exhibited the five best advantages of device performance including a minimum turn-on voltage as low as 3.1 V, a maximum luminescence intensity as high as 26564 cd m−2, a highest current density value of 348.9 mA cm−2 at a voltage of 11 V, the smallest efficiency roll-off, as well as the greatest power efficiency of 1.46 lm W−1 relative to all of the other tested devices with thicker TFBIQ and also 10 nm-thick MoO3 as hole-injection layers (HILs). As a promising candidate for an organic HIL material, the as-prepared TFBIQ exhibited a strong thickness effect on the performance of corresponding OLEDs. Furthermore, the theoretical calculated vertical ionization potential of the fluorinated TFBIQ suggests better anti-oxidation stability than that of the non-fluorinated structure.
AB - A novel perfluoro-1,4-phenylenyl 6H-indolo[2,3-b]quinoxaline derivative (TFBIQ) was designed and synthesized by using a C−H direct arylation method. The optoelectrical properties of the obtained TFBIQ were fully characterized by UV/Vis spectroscopy, photoluminescence spectroscopy, cyclic voltammetry, and a group of Alq3-based green organic light-emitting diodes (OLEDs). Device A, which used 0.5 nm-thick TFBIQ as the interfacial modification layer, exhibited the five best advantages of device performance including a minimum turn-on voltage as low as 3.1 V, a maximum luminescence intensity as high as 26564 cd m−2, a highest current density value of 348.9 mA cm−2 at a voltage of 11 V, the smallest efficiency roll-off, as well as the greatest power efficiency of 1.46 lm W−1 relative to all of the other tested devices with thicker TFBIQ and also 10 nm-thick MoO3 as hole-injection layers (HILs). As a promising candidate for an organic HIL material, the as-prepared TFBIQ exhibited a strong thickness effect on the performance of corresponding OLEDs. Furthermore, the theoretical calculated vertical ionization potential of the fluorinated TFBIQ suggests better anti-oxidation stability than that of the non-fluorinated structure.
KW - arylation
KW - heterocycles
KW - hole injection
KW - light-emitting diodes
KW - luminescence
UR - http://www.scopus.com/inward/record.url?scp=85015982673&partnerID=8YFLogxK
U2 - 10.1002/asia.201700112
DO - 10.1002/asia.201700112
M3 - 文章
C2 - 28213900
AN - SCOPUS:85015982673
SN - 1861-4728
VL - 12
SP - 920
EP - 926
JO - Chemistry - An Asian Journal
JF - Chemistry - An Asian Journal
IS - 8
ER -