Abstract
A molecular design strategy for a bipolar host material is demonstrated by incorporating both electron donor and electron acceptor into a silicon-bridged structure. A two-color, all phosphor and single-emitting-layer white OLED hosted by the new bipolar compound p-BISiTPA is fabricated. The device displays a high efficiency, with ηc, max of 51.8 cd A-1, η p, max of 42.7 lm W-1 and ηext, max of 19.1%. Furthermore, the ηext is still as high as 17.4% at the luminance of 1000 cd m-2, with a rather low roll-off value of 8.9%.
Original language | English |
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Pages (from-to) | 5370-5373 |
Number of pages | 4 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 47 |
DOIs | |
State | Published - 14 Dec 2010 |
Externally published | Yes |
Keywords
- Bipolar host
- Phosphorescence
- Silicon-bridged molecule
- White OLEDs