Effect of destructive {0 0 1}-{1 0 1} heterojunction on separating photo-generated electrons and holes of anatase TiO2

Wei Wang; Yingjie Zhou; Yan Wen; Yaru Ni; Chunhua Lu; Zhongzi Xu

doi:10.1016/j.matlet.2015.05.049

Effect of destructive {0 0 1}-{1 0 1} heterojunction on separating photo-generated electrons and holes of anatase TiO₂

Wei Wang, Yingjie Zhou, Yan Wen, Yaru Ni, Chunhua Lu, Zhongzi Xu

College of Materials Science and Engineering

Nanjing University of Information Science & Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Separation behavior of photo-generated electrons and holes is systematically investigated on anatase TiO₂ with selectively etched {0 0 1} facet. Results indicate that the {0 0 1} facet etching degree and the resulted Ti³⁺ impurity centers are increased along with the F ion concentration in the acid environment. However, both the etched {0 0 1} facet and the Ti³⁺ centers have little effect on trapping the photo-generated electrons. Thus all the Au particles are photo-deposited on the {1 0 1} facet, while the etched {0 0 1} facet remains blank. The present work confirms that the {0 0 1}-{1 0 1} heterojunction is really helpful to separate the photo-generated electrons and holes. This behavior is mainly associated with the intrinsic bulk crystal structure, but not the external crystal defects.

Original language	English
Pages (from-to)	29-31
Number of pages	3
Journal	Materials Letters
Volume	158
DOIs	https://doi.org/10.1016/j.matlet.2015.05.049
State	Published - 8 Jun 2015

Keywords

Defects
Heterojunction
Semiconductors
Surfaces

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10.1016/j.matlet.2015.05.049

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title = "Effect of destructive {0 0 1}-{1 0 1} heterojunction on separating photo-generated electrons and holes of anatase TiO2",

abstract = "Separation behavior of photo-generated electrons and holes is systematically investigated on anatase TiO2 with selectively etched {0 0 1} facet. Results indicate that the {0 0 1} facet etching degree and the resulted Ti3+ impurity centers are increased along with the F ion concentration in the acid environment. However, both the etched {0 0 1} facet and the Ti3+ centers have little effect on trapping the photo-generated electrons. Thus all the Au particles are photo-deposited on the {1 0 1} facet, while the etched {0 0 1} facet remains blank. The present work confirms that the {0 0 1}-{1 0 1} heterojunction is really helpful to separate the photo-generated electrons and holes. This behavior is mainly associated with the intrinsic bulk crystal structure, but not the external crystal defects.",

keywords = "Defects, Heterojunction, Semiconductors, Surfaces",

author = "Wei Wang and Yingjie Zhou and Yan Wen and Yaru Ni and Chunhua Lu and Zhongzi Xu",

year = "2015",

month = jun,

day = "8",

doi = "10.1016/j.matlet.2015.05.049",

language = "英语",

volume = "158",

pages = "29--31",

journal = "Materials Letters",

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TY - JOUR

T1 - Effect of destructive {0 0 1}-{1 0 1} heterojunction on separating photo-generated electrons and holes of anatase TiO2

AU - Wang, Wei

AU - Zhou, Yingjie

AU - Wen, Yan

AU - Ni, Yaru

AU - Lu, Chunhua

AU - Xu, Zhongzi

PY - 2015/6/8

Y1 - 2015/6/8

N2 - Separation behavior of photo-generated electrons and holes is systematically investigated on anatase TiO2 with selectively etched {0 0 1} facet. Results indicate that the {0 0 1} facet etching degree and the resulted Ti3+ impurity centers are increased along with the F ion concentration in the acid environment. However, both the etched {0 0 1} facet and the Ti3+ centers have little effect on trapping the photo-generated electrons. Thus all the Au particles are photo-deposited on the {1 0 1} facet, while the etched {0 0 1} facet remains blank. The present work confirms that the {0 0 1}-{1 0 1} heterojunction is really helpful to separate the photo-generated electrons and holes. This behavior is mainly associated with the intrinsic bulk crystal structure, but not the external crystal defects.

AB - Separation behavior of photo-generated electrons and holes is systematically investigated on anatase TiO2 with selectively etched {0 0 1} facet. Results indicate that the {0 0 1} facet etching degree and the resulted Ti3+ impurity centers are increased along with the F ion concentration in the acid environment. However, both the etched {0 0 1} facet and the Ti3+ centers have little effect on trapping the photo-generated electrons. Thus all the Au particles are photo-deposited on the {1 0 1} facet, while the etched {0 0 1} facet remains blank. The present work confirms that the {0 0 1}-{1 0 1} heterojunction is really helpful to separate the photo-generated electrons and holes. This behavior is mainly associated with the intrinsic bulk crystal structure, but not the external crystal defects.

KW - Defects

KW - Heterojunction

KW - Semiconductors

KW - Surfaces

UR - http://www.scopus.com/inward/record.url?scp=84930641212&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2015.05.049

DO - 10.1016/j.matlet.2015.05.049

M3 - 文章

AN - SCOPUS:84930641212

SN - 0167-577X

VL - 158

SP - 29

EP - 31

JO - Materials Letters

JF - Materials Letters

ER -

Effect of destructive {0 0 1}-{1 0 1} heterojunction on separating photo-generated electrons and holes of anatase TiO₂

Abstract

Keywords

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