TY - JOUR
T1 - Effect of preparation technique on BaTiO 3-base lead-free high voltage ceramic capacitor materials
AU - Jing, Wenbin
AU - Li, Shaobing
AU - Xu, Liang
AU - Wang, Lixi
AU - Zhang, Qitu
PY - 2012/3
Y1 - 2012/3
N2 - The SrTiO 3, CaCO 3 and Bi 2O 3·3TiO 2 were added to the BaTiO 3-based lead-free high voltage ceramic capacitor materials. And the formula (1-z)(Ba 1-x-ySr xCa y) TiO 3 · z(Bi 2O 3·3Ti0 3) was gotten, the effect of preparation technology on the dielectric properties were investigated. The results showed that, in certain holding time, the best sintering temperature depended on the content of Bi 2O 3·3TiO 2, and it reduced with Bi 2O 3·3TiO 2 increasing. The dielectric properties of BaTiO 3-based materials with 30%SrTiO 3, 10%CaCO 3 and 3% Bi 2O 3·3TiO 2(mole fraction) were: ε r=3802, tgδ=4.2×10 -3, E b=9.2 kV·mm -1, the best sintering temperature was 1 240°C, and the Curie temperature decreased to 35°C , the broadening of the dielectric peaks. When the Bi 2O 3·3TiO 2 content increased to 4%, the best sintering temperature was 1220°C. In the reasonable temperature range of sintering, low-temperature sintering and rising temperature slowly would benefit the densification of fine grains, thus improving the comprehensive performance of high voltage ceramic capacitor materials.
AB - The SrTiO 3, CaCO 3 and Bi 2O 3·3TiO 2 were added to the BaTiO 3-based lead-free high voltage ceramic capacitor materials. And the formula (1-z)(Ba 1-x-ySr xCa y) TiO 3 · z(Bi 2O 3·3Ti0 3) was gotten, the effect of preparation technology on the dielectric properties were investigated. The results showed that, in certain holding time, the best sintering temperature depended on the content of Bi 2O 3·3TiO 2, and it reduced with Bi 2O 3·3TiO 2 increasing. The dielectric properties of BaTiO 3-based materials with 30%SrTiO 3, 10%CaCO 3 and 3% Bi 2O 3·3TiO 2(mole fraction) were: ε r=3802, tgδ=4.2×10 -3, E b=9.2 kV·mm -1, the best sintering temperature was 1 240°C, and the Curie temperature decreased to 35°C , the broadening of the dielectric peaks. When the Bi 2O 3·3TiO 2 content increased to 4%, the best sintering temperature was 1220°C. In the reasonable temperature range of sintering, low-temperature sintering and rising temperature slowly would benefit the densification of fine grains, thus improving the comprehensive performance of high voltage ceramic capacitor materials.
KW - BaTiO
KW - Dielectrical property
KW - High voltage ceramic capacitor
KW - Sintering
UR - http://www.scopus.com/inward/record.url?scp=84860150009&partnerID=8YFLogxK
U2 - 10.3969/j.issn.0258-7076.2012.02.021
DO - 10.3969/j.issn.0258-7076.2012.02.021
M3 - 文章
AN - SCOPUS:84860150009
SN - 0258-7076
VL - 36
SP - 286
EP - 291
JO - Xiyou Jinshu/Chinese Journal of Rare Metals
JF - Xiyou Jinshu/Chinese Journal of Rare Metals
IS - 2
ER -