Abstract
In the present work, the thermoelectric properties of S-doped Bi2O2-xSxSe at the temperatures from 320 to 793 K have been studied. The results show that the solubility limit of S is around x = 0.01 and S-doping is helpful to the sintering and grain growth of Bi2O2Se. Moreover, S-doping reduces the band gap of Bi2O2-xSxSe remarkably as x rises. As a result, a thousand times promotion of electrical conductivity at x = 0.02 is obtained, leading to a nearly 3 times increase of power factor at 787 K. By virtue of the intrinsically low thermal conductivity, a peak ZT of 0.29 at 793 K with an average of 0.21 has been achieved for Bi2O1.98S0.02Se, which is nearly 3 and 6 times larger than that of the pristine one. This study indicates that a small amount of S substitution for O could improve the thermoelectric properties of Bi2O2Se effectively.
Original language | English |
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Pages (from-to) | 5543-5548 |
Number of pages | 6 |
Journal | Journal of the European Ceramic Society |
Volume | 40 |
Issue number | 15 |
DOIs | |
State | Published - Dec 2020 |
Keywords
- BiOSe
- Electrical conductivity
- Grain size
- S-doping
- Thermoelectric