Effects of sulfur substitution for oxygen on the thermoelectric properties of Bi2O2Se

Lin Pan, Zicheng Zhao, Nannan Yang, Wanli Xing, Jieyun Zhang, Yunfei Liu, Changchun Chen, Dongxu Li, Yifeng Wang

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

In the present work, the thermoelectric properties of S-doped Bi2O2-xSxSe at the temperatures from 320 to 793 K have been studied. The results show that the solubility limit of S is around x = 0.01 and S-doping is helpful to the sintering and grain growth of Bi2O2Se. Moreover, S-doping reduces the band gap of Bi2O2-xSxSe remarkably as x rises. As a result, a thousand times promotion of electrical conductivity at x = 0.02 is obtained, leading to a nearly 3 times increase of power factor at 787 K. By virtue of the intrinsically low thermal conductivity, a peak ZT of 0.29 at 793 K with an average of 0.21 has been achieved for Bi2O1.98S0.02Se, which is nearly 3 and 6 times larger than that of the pristine one. This study indicates that a small amount of S substitution for O could improve the thermoelectric properties of Bi2O2Se effectively.

Original languageEnglish
Pages (from-to)5543-5548
Number of pages6
JournalJournal of the European Ceramic Society
Volume40
Issue number15
DOIs
StatePublished - Dec 2020

Keywords

  • BiOSe
  • Electrical conductivity
  • Grain size
  • S-doping
  • Thermoelectric

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