TY - JOUR
T1 - Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts
AU - Jiang, Guotao
AU - Hu, Xiaohui
AU - Sun, Litao
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/6/27
Y1 - 2023/6/27
N2 - Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance. Herein, we use 2D metallic Fe3GeTe2 (FGT) as an electrode in contact with TMDs semiconductors MX2 (M = Mo, W; X = S, Se, Te) and investigate the contact properties of FGT/MX2 based on density functional theory calculations. We demonstrated that FGT/MX2 presents n-type Schottky contacts, and their n-type Schottky barrier heights are lower than that of the most common bulk metal contacts with MX2, suggesting that FGT can be used as an efficient metallic electrode for MX2. The transitions from n-type Schottky contact to p-type Schottky contact and from Schottky contact to Ohmic contact can be achieved in FGT/MX2 under the electric field. This work not only illustrates an effective method to modulate the contact types and Schottky barrier heights of FGT/MX2 contacts but also provides a route for designing the nanodevices based on FGT/MX2 electrical contacts.
AB - Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance. Herein, we use 2D metallic Fe3GeTe2 (FGT) as an electrode in contact with TMDs semiconductors MX2 (M = Mo, W; X = S, Se, Te) and investigate the contact properties of FGT/MX2 based on density functional theory calculations. We demonstrated that FGT/MX2 presents n-type Schottky contacts, and their n-type Schottky barrier heights are lower than that of the most common bulk metal contacts with MX2, suggesting that FGT can be used as an efficient metallic electrode for MX2. The transitions from n-type Schottky contact to p-type Schottky contact and from Schottky contact to Ohmic contact can be achieved in FGT/MX2 under the electric field. This work not only illustrates an effective method to modulate the contact types and Schottky barrier heights of FGT/MX2 contacts but also provides a route for designing the nanodevices based on FGT/MX2 electrical contacts.
KW - FeGeTe
KW - Schottky barrier
KW - density functional theory
KW - electric field
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85161014052&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.3c00151
DO - 10.1021/acsaelm.3c00151
M3 - 文章
AN - SCOPUS:85161014052
SN - 2637-6113
VL - 5
SP - 3071
EP - 3077
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 6
ER -