Abstract
Perovskites have emerged as a rising material category for highly efficient light emission, the electrical control of which is crucial for practical applications. However, achieving efficient, precise, wide-range, and rich control remains challenging due to their inherently poor electrical conductivity. In this work, we demonstrate the integration of two-dimensional (2D) transistors to assist the electrical control of perovskite light-emission. The implementation of a 2D channel with tunable electronic properties and strong interfacial coupling provides an effective bridge between electrical control and light emission of perovskite. The photoluminescence (PL) can be efficiently modulated with a small bias voltage of just 0.2 V, achieving a modulation efficiency of ∼87% per voltage. Furthermore, the PL enhancement can reach up to ∼700% with the assistance of gate voltage. This study underscores the promise of 2D transistors as a low-power, high-efficiency, and highly integrated platform for tailoring the optoelectronic properties of perovskites.
Original language | English |
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Pages (from-to) | 7069-7074 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 25 |
Issue number | 17 |
DOIs | |
State | Published - 30 Apr 2025 |
Keywords
- 2D materials
- Electrical modulation
- Perovskites
- Photoluminescence
- Transistors