TY - JOUR
T1 - Electrical properties of Bi3.15Nd0.85Ti 2.8-xZr0.2MnxO12 thin films with different Mn content synthesized by chemical solution deposition (CSD)
AU - Chen, Changchun
AU - Wang, Lurong
AU - Tang, Zhonghai
AU - Lu, Chunhua
PY - 2011/5/1
Y1 - 2011/5/1
N2 - Bi3.15Nd0.85Ti2.8-xZr0.2Mn xO12 (BNTZM) thin films with various Mn content (x = 0, 0.005, 0.01, 0.03, and 0.05) have been prepared on Pt/Ti/SiO2/Si (100) substrates by a chemical solution deposition (CSD) technique. The crystal structures of BNTZM thin film have been analyzed by X-ray diffraction (XRD). The dependence of Mn contents on the ferroelectric, dielectric properties, and leakage current of these BNTZM films have been thoroughly investigated. The XRD analysis demonstrated that all the BNTZM thin films were of typical bismuth-layer-structured ferroelectrics (BLSF) polycrystalline structure and exhibited a highly preferred (117) orientation. Among these BNTZM films, the BNTZM thin film with Mn content equal to 0.01 exhibits the maximum remnant polarization (2Pr) of 48μC/cm2 and a low coercive field (2Ec) of 177 kV/cm. In addition, the BNTZM thin film with x = 0.01 (Mn) showed a fatigue-free behavior up to 1 × 1010 read/write cycles.
AB - Bi3.15Nd0.85Ti2.8-xZr0.2Mn xO12 (BNTZM) thin films with various Mn content (x = 0, 0.005, 0.01, 0.03, and 0.05) have been prepared on Pt/Ti/SiO2/Si (100) substrates by a chemical solution deposition (CSD) technique. The crystal structures of BNTZM thin film have been analyzed by X-ray diffraction (XRD). The dependence of Mn contents on the ferroelectric, dielectric properties, and leakage current of these BNTZM films have been thoroughly investigated. The XRD analysis demonstrated that all the BNTZM thin films were of typical bismuth-layer-structured ferroelectrics (BLSF) polycrystalline structure and exhibited a highly preferred (117) orientation. Among these BNTZM films, the BNTZM thin film with Mn content equal to 0.01 exhibits the maximum remnant polarization (2Pr) of 48μC/cm2 and a low coercive field (2Ec) of 177 kV/cm. In addition, the BNTZM thin film with x = 0.01 (Mn) showed a fatigue-free behavior up to 1 × 1010 read/write cycles.
KW - BiNdTiZrMn O films
KW - Chemical solution deposition
KW - Ferroelectrics properties
UR - http://www.scopus.com/inward/record.url?scp=79955463367&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2010.12.077
DO - 10.1016/j.jnoncrysol.2010.12.077
M3 - 文章
AN - SCOPUS:79955463367
SN - 0022-3093
VL - 357
SP - 2093
EP - 2096
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 10
ER -