Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2

Yulong Wang; Junfu Wen; Zhenghua Fan; Ningzhong Bao; Rong Huang; Rong Tu; Yifeng Wang

doi:10.1063/1.4918687

Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS₂

Yulong Wang, Junfu Wen, Zhenghua Fan, Ningzhong Bao, Rong Huang, Rong Tu, Yifeng Wang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS₂ bulk ceramic, about 1 mW/(mK²) at 300 K and 1.23 mW/(mK²) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS₂-based thermoelectric materials. Compared to TiS₂, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS₂ and PbS.

Original language	English
Article number	047126
Journal	AIP Advances
Volume	5
Issue number	4
DOIs	https://doi.org/10.1063/1.4918687
State	Published - 1 Apr 2015

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abstract = "We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS.",

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T1 - Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2

AU - Wang, Yulong

AU - Wen, Junfu

AU - Fan, Zhenghua

AU - Bao, Ningzhong

AU - Huang, Rong

AU - Tu, Rong

AU - Wang, Yifeng

PY - 2015/4/1

Y1 - 2015/4/1

N2 - We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS.

AB - We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS.

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Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS₂

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