Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template

Zhiyuan Zeng; Xiao Huang; Zongyou Yin; Hong Li; Yang Chen; Hai Li; Qing Zhang; Jan Ma; Freddy Boey; Hua Zhang

doi:10.1002/adma.201104281

Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template

Zhiyuan Zeng, Xiao Huang, Zongyou Yin, Hong Li, Yang Chen, Hai Li, Qing Zhang, Jan Ma, Freddy Boey, Hua Zhang

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

199 Scopus citations

Abstract

Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O₂ plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior.

Original language	English
Pages (from-to)	4138-4142
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	30
DOIs	https://doi.org/10.1002/adma.201104281
State	Published - 8 Aug 2012
Externally published	Yes

Keywords

anodic aluminum oxide (AAO)
field-effect transistors
graphene
nanofabrication
nanomesh

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10.1002/adma.201104281

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abstract = "Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior.",

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AU - Zeng, Zhiyuan

AU - Huang, Xiao

AU - Yin, Zongyou

AU - Li, Hong

AU - Chen, Yang

AU - Li, Hai

AU - Zhang, Qing

AU - Ma, Jan

AU - Boey, Freddy

AU - Zhang, Hua

PY - 2012/8/8

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N2 - Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior.

AB - Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior.

KW - anodic aluminum oxide (AAO)

KW - field-effect transistors

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KW - nanofabrication

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Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template

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Keywords

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