High thermoelectric properties of n-type AgBiSe2

Lin Pan; David Bérardan; Nita Dragoe

doi:10.1021/ja312474n

High thermoelectric properties of n-type AgBiSe₂

Lin Pan, David Bérardan, Nita Dragoe

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148 Scopus citations

Abstract

We report on the thermoelectric (TE) performance of intrinsic n-type AgBiSe₂, a Pb-free material with more earth-abundant and cheaper elements than intrinsic p-type homologous AgSbTe₂. Pb doping changes n-type AgBiSe₂ to p-type but leads to poor electrical transport properties. Nb doping enhances the TE properties of n-type AgBiSe₂ by increasing the carrier concentration. As a result of the intrinsically low thermal conductivity (0.7 W m^-1 K^-1), low electrical resistivity (5.2 mΩ cm), and high absolute Seebeck coefficient (-218 μV/K), the TE figure of merit (ZT) at 773 K is significantly increased from 0.5 for solid-state-synthesized pristine AgBiSe₂ to 1 for Ag _0.96Nb_0.04BiSe₂, which makes it a promising n-type candidate for medium-temperature TE applications.

Original language	English
Pages (from-to)	4914-4917
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	135
Issue number	13
DOIs	https://doi.org/10.1021/ja312474n
State	Published - 3 Apr 2013
Externally published	Yes

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abstract = "We report on the thermoelectric (TE) performance of intrinsic n-type AgBiSe2, a Pb-free material with more earth-abundant and cheaper elements than intrinsic p-type homologous AgSbTe2. Pb doping changes n-type AgBiSe2 to p-type but leads to poor electrical transport properties. Nb doping enhances the TE properties of n-type AgBiSe2 by increasing the carrier concentration. As a result of the intrinsically low thermal conductivity (0.7 W m-1 K-1), low electrical resistivity (5.2 mΩ cm), and high absolute Seebeck coefficient (-218 μV/K), the TE figure of merit (ZT) at 773 K is significantly increased from 0.5 for solid-state-synthesized pristine AgBiSe2 to 1 for Ag 0.96Nb0.04BiSe2, which makes it a promising n-type candidate for medium-temperature TE applications.",

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AU - Dragoe, Nita

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N2 - We report on the thermoelectric (TE) performance of intrinsic n-type AgBiSe2, a Pb-free material with more earth-abundant and cheaper elements than intrinsic p-type homologous AgSbTe2. Pb doping changes n-type AgBiSe2 to p-type but leads to poor electrical transport properties. Nb doping enhances the TE properties of n-type AgBiSe2 by increasing the carrier concentration. As a result of the intrinsically low thermal conductivity (0.7 W m-1 K-1), low electrical resistivity (5.2 mΩ cm), and high absolute Seebeck coefficient (-218 μV/K), the TE figure of merit (ZT) at 773 K is significantly increased from 0.5 for solid-state-synthesized pristine AgBiSe2 to 1 for Ag 0.96Nb0.04BiSe2, which makes it a promising n-type candidate for medium-temperature TE applications.

AB - We report on the thermoelectric (TE) performance of intrinsic n-type AgBiSe2, a Pb-free material with more earth-abundant and cheaper elements than intrinsic p-type homologous AgSbTe2. Pb doping changes n-type AgBiSe2 to p-type but leads to poor electrical transport properties. Nb doping enhances the TE properties of n-type AgBiSe2 by increasing the carrier concentration. As a result of the intrinsically low thermal conductivity (0.7 W m-1 K-1), low electrical resistivity (5.2 mΩ cm), and high absolute Seebeck coefficient (-218 μV/K), the TE figure of merit (ZT) at 773 K is significantly increased from 0.5 for solid-state-synthesized pristine AgBiSe2 to 1 for Ag 0.96Nb0.04BiSe2, which makes it a promising n-type candidate for medium-temperature TE applications.

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High thermoelectric properties of n-type AgBiSe₂

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