Abstract
We report a remarkable improvement of photoluminescence from ZnO-core/a-SiNx:H-shell nanorod arrays by modulating the bandgap of a-SiNx:H shell. The a-SiNx:H shell with a large bandgap can significantly enhance UV emission by more than 8 times compared with the uncoated ZnO nanorods. Moreover, it is found that the deep-level defect emission can be almost completely suppressed for all the core-shell nanostructures, which is independent of the bandgaps of a-SiNx:H shells. Combining with the analysis of infrared absorption spectrum and luminescence characteristics of NH3-plasma treated ZnO nanorods, the improved photoluminescence is attributed to the decrease of nonradiative recombination probability and the reduction of surface band bending of ZnO cores due to the H and N passivation and the screening effect from the a-SiNx:H shells. Our findings open up new possibilities for fabricating stable and efficient UV-only emitting devices.
Original language | English |
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Pages (from-to) | 5891-5896 |
Number of pages | 6 |
Journal | Optics Express |
Volume | 21 |
Issue number | 5 |
DOIs | |
State | Published - 11 Mar 2013 |
Externally published | Yes |