TY - JOUR
T1 - Microstructures and microwave dielectric properties of Mg2SiO4–Ca0.9Sr0.1TiO3 ceramics
AU - Liu, Ling
AU - Feng, Yongbao
AU - Qiu, Tai
AU - Li, Xiaoyun
N1 - Publisher Copyright:
© 2014, Springer Science+Business Media New York.
PY - 2015/3
Y1 - 2015/3
N2 - The microstructures and microwave dielectric properties of (1 − x)Mg2SiO4–xCa0.9Sr0.1TiO3 (x = 0.05–0.08) composite ceramics, prepared via a conventional solid-state ceramic route, were investigated. As expected, an increase in sintering temperature effectively promoted densification and enhanced the dielectric properties of the (1 − x)Mg2SiO4–xCa0.9Sr0.1TiO3 ceramics used in this study. As the amount of Ca0.9Sr0.1TiO3 increased, temperature coefficient of resonant frequency (τf) increased; with a near-zero τf obtained for samples where x = 0.06. The optimal microwave dielectric properties, a dielectric constant (εr) of 8.01, high quality factor (Q × f) of 58,389 GHz (at 14.6 GHz) and a τf of −3.62 ppm/°C, were obtained for 0.94Mg2SiO4–0.06Ca0.9Sr0.1TiO3 sintered at 1,440 °C for 3 h.
AB - The microstructures and microwave dielectric properties of (1 − x)Mg2SiO4–xCa0.9Sr0.1TiO3 (x = 0.05–0.08) composite ceramics, prepared via a conventional solid-state ceramic route, were investigated. As expected, an increase in sintering temperature effectively promoted densification and enhanced the dielectric properties of the (1 − x)Mg2SiO4–xCa0.9Sr0.1TiO3 ceramics used in this study. As the amount of Ca0.9Sr0.1TiO3 increased, temperature coefficient of resonant frequency (τf) increased; with a near-zero τf obtained for samples where x = 0.06. The optimal microwave dielectric properties, a dielectric constant (εr) of 8.01, high quality factor (Q × f) of 58,389 GHz (at 14.6 GHz) and a τf of −3.62 ppm/°C, were obtained for 0.94Mg2SiO4–0.06Ca0.9Sr0.1TiO3 sintered at 1,440 °C for 3 h.
UR - http://www.scopus.com/inward/record.url?scp=84925487949&partnerID=8YFLogxK
U2 - 10.1007/s10854-014-2540-8
DO - 10.1007/s10854-014-2540-8
M3 - 文章
AN - SCOPUS:84925487949
SN - 0957-4522
VL - 26
SP - 1316
EP - 1321
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -