Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Lin Wang; Xiaolong Chen; Yang Wang; Zefei Wu; Wei Li; Yu Han; Mingwei Zhang; Yuheng He; Chao Zhu; Kwok Kwong Fung; Ning Wang

doi:10.1039/c2nr33434h

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Lin Wang, Xiaolong Chen, Yang Wang, Zefei Wu, Wei Li, Yu Han, Mingwei Zhang, Yuheng He, Chao Zhu, Kwok Kwong Fung, Ning Wang

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y₂O₃ as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y ₂O₃-covered SLG and a very few short-range impurities have been introduced by Y₂O₃. Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y₂O₃ layers.

Original language	English
Pages (from-to)	1116-1120
Number of pages	5
Journal	Nanoscale
Volume	5
Issue number	3
DOIs	https://doi.org/10.1039/c2nr33434h
State	Published - 7 Feb 2013
Externally published	Yes

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abstract = "We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y2O3 as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y 2O3-covered SLG and a very few short-range impurities have been introduced by Y2O3. Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y2O3 layers.",

author = "Lin Wang and Xiaolong Chen and Yang Wang and Zefei Wu and Wei Li and Yu Han and Mingwei Zhang and Yuheng He and Chao Zhu and Fung, {Kwok Kwong} and Ning Wang",

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doi = "10.1039/c2nr33434h",

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T1 - Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

AU - Wang, Lin

AU - Chen, Xiaolong

AU - Wang, Yang

AU - Wu, Zefei

AU - Li, Wei

AU - Han, Yu

AU - Zhang, Mingwei

AU - He, Yuheng

AU - Zhu, Chao

AU - Fung, Kwok Kwong

AU - Wang, Ning

PY - 2013/2/7

Y1 - 2013/2/7

N2 - We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y2O3 as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y 2O3-covered SLG and a very few short-range impurities have been introduced by Y2O3. Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y2O3 layers.

AB - We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y2O3 as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y 2O3-covered SLG and a very few short-range impurities have been introduced by Y2O3. Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y2O3 layers.

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U2 - 10.1039/c2nr33434h

DO - 10.1039/c2nr33434h

M3 - 文章

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AN - SCOPUS:84872736218

SN - 2040-3364

VL - 5

SP - 1116

EP - 1120

JO - Nanoscale

JF - Nanoscale

IS - 3

ER -

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

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