Modifying electronic transport properties of graphene by electron beam irradiation

Y. H. He; L. Wang; X. L. Chen; Z. F. Wu; W. Li; Y. Cai; N. Wang

doi:10.1063/1.3615294

Modifying electronic transport properties of graphene by electron beam irradiation

Y. H. He, L. Wang, X. L. Chen, Z. F. Wu, W. Li, Y. Cai, N. Wang

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We demonstrate that electron beam irradiation with precise dosage control under clean vacuum conditions can induce bond disorder and inter-valley scattering but not necessarily lattice damage in high quality single-layer graphene, as evidenced by the changes of temperature-dependent transport properties, quantum Hall effects, and large negative magnetoresistance effects observed at cryogenic temperatures. The bond disorder significantly modified the Raman scattering and electronic transport properties of graphene, which is consistent with that observed in hydrogenated graphene. In situ transport measurements at different sample treatment stages revealed an interesting activation process of graphene through electron beam irradiation. The activated graphene samples are very sensitive to oxygen and water vapors.

Original language	English
Article number	033109
Journal	Applied Physics Letters
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.3615294
State	Published - 18 Jul 2011
Externally published	Yes

Access to Document

10.1063/1.3615294

Cite this

@article{a5f374965a5f48e1a14cef81651a6ac1,

title = "Modifying electronic transport properties of graphene by electron beam irradiation",

abstract = "We demonstrate that electron beam irradiation with precise dosage control under clean vacuum conditions can induce bond disorder and inter-valley scattering but not necessarily lattice damage in high quality single-layer graphene, as evidenced by the changes of temperature-dependent transport properties, quantum Hall effects, and large negative magnetoresistance effects observed at cryogenic temperatures. The bond disorder significantly modified the Raman scattering and electronic transport properties of graphene, which is consistent with that observed in hydrogenated graphene. In situ transport measurements at different sample treatment stages revealed an interesting activation process of graphene through electron beam irradiation. The activated graphene samples are very sensitive to oxygen and water vapors.",

author = "He, {Y. H.} and L. Wang and Chen, {X. L.} and Wu, {Z. F.} and W. Li and Y. Cai and N. Wang",

year = "2011",

month = jul,

day = "18",

doi = "10.1063/1.3615294",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Modifying electronic transport properties of graphene by electron beam irradiation

AU - He, Y. H.

AU - Wang, L.

AU - Chen, X. L.

AU - Wu, Z. F.

AU - Li, W.

AU - Cai, Y.

AU - Wang, N.

PY - 2011/7/18

Y1 - 2011/7/18

N2 - We demonstrate that electron beam irradiation with precise dosage control under clean vacuum conditions can induce bond disorder and inter-valley scattering but not necessarily lattice damage in high quality single-layer graphene, as evidenced by the changes of temperature-dependent transport properties, quantum Hall effects, and large negative magnetoresistance effects observed at cryogenic temperatures. The bond disorder significantly modified the Raman scattering and electronic transport properties of graphene, which is consistent with that observed in hydrogenated graphene. In situ transport measurements at different sample treatment stages revealed an interesting activation process of graphene through electron beam irradiation. The activated graphene samples are very sensitive to oxygen and water vapors.

AB - We demonstrate that electron beam irradiation with precise dosage control under clean vacuum conditions can induce bond disorder and inter-valley scattering but not necessarily lattice damage in high quality single-layer graphene, as evidenced by the changes of temperature-dependent transport properties, quantum Hall effects, and large negative magnetoresistance effects observed at cryogenic temperatures. The bond disorder significantly modified the Raman scattering and electronic transport properties of graphene, which is consistent with that observed in hydrogenated graphene. In situ transport measurements at different sample treatment stages revealed an interesting activation process of graphene through electron beam irradiation. The activated graphene samples are very sensitive to oxygen and water vapors.

UR - http://www.scopus.com/inward/record.url?scp=79960791770&partnerID=8YFLogxK

U2 - 10.1063/1.3615294

DO - 10.1063/1.3615294

M3 - 文章

AN - SCOPUS:79960791770

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033109

ER -

Modifying electronic transport properties of graphene by electron beam irradiation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this