Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides

Chunlei Wan; Yifeng Wang; Wataru Norimatsu; Michiko Kusunoki; Kunihito Koumoto

doi:10.1063/1.3691887

Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides

Chunlei Wan, Yifeng Wang, Wataru Norimatsu, Michiko Kusunoki, Kunihito Koumoto

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

Layered metal sulfides (MS) _1x(TiS ₂) ₂ (M Pb, Sn, Bi) with alternative stacking of MS layers and TiS ₂ layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS) _1.2(TiS ₂) ₂ and the staging disorder in (BiS) _1.2(TiS ₂) ₂. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a phonon-blocking, electron-transmitting scenario.

Original language	English
Article number	101913
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3691887
State	Published - 5 Mar 2012
Externally published	Yes

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title = "Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides",

abstract = "Layered metal sulfides (MS) 1x(TiS 2) 2 (M Pb, Sn, Bi) with alternative stacking of MS layers and TiS 2 layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS) 1.2(TiS 2) 2 and the staging disorder in (BiS) 1.2(TiS 2) 2. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a phonon-blocking, electron-transmitting scenario.",

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T1 - Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides

AU - Wan, Chunlei

AU - Wang, Yifeng

AU - Norimatsu, Wataru

AU - Kusunoki, Michiko

AU - Koumoto, Kunihito

PY - 2012/3/5

Y1 - 2012/3/5

N2 - Layered metal sulfides (MS) 1x(TiS 2) 2 (M Pb, Sn, Bi) with alternative stacking of MS layers and TiS 2 layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS) 1.2(TiS 2) 2 and the staging disorder in (BiS) 1.2(TiS 2) 2. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a phonon-blocking, electron-transmitting scenario.

AB - Layered metal sulfides (MS) 1x(TiS 2) 2 (M Pb, Sn, Bi) with alternative stacking of MS layers and TiS 2 layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS) 1.2(TiS 2) 2 and the staging disorder in (BiS) 1.2(TiS 2) 2. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a phonon-blocking, electron-transmitting scenario.

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JO - Applied Physics Letters

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Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides

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