Negative compressibility observed in graphene containing resonant impurities

X. L. Chen; L. Wang; W. Li; Y. Wang; Y. H. He; Z. F. Wu; Y. Han; M. W. Zhang; W. Xiong; N. Wang

doi:10.1063/1.4807394

Negative compressibility observed in graphene containing resonant impurities

X. L. Chen, L. Wang, W. Li, Y. Wang, Y. H. He, Z. F. Wu, Y. Han, M. W. Zhang, W. Xiong, N. Wang

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ± 0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

Original language	English
Article number	203103
Journal	Applied Physics Letters
Volume	102
Issue number	20
DOIs	https://doi.org/10.1063/1.4807394
State	Published - 20 May 2013
Externally published	Yes

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title = "Negative compressibility observed in graphene containing resonant impurities",

abstract = "We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ± 0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.",

author = "Chen, {X. L.} and L. Wang and W. Li and Y. Wang and He, {Y. H.} and Wu, {Z. F.} and Y. Han and Zhang, {M. W.} and W. Xiong and N. Wang",

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doi = "10.1063/1.4807394",

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T1 - Negative compressibility observed in graphene containing resonant impurities

AU - Chen, X. L.

AU - Wang, L.

AU - Li, W.

AU - Wang, Y.

AU - He, Y. H.

AU - Wu, Z. F.

AU - Han, Y.

AU - Zhang, M. W.

AU - Xiong, W.

AU - Wang, N.

PY - 2013/5/20

Y1 - 2013/5/20

N2 - We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ± 0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

AB - We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ± 0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84878344756&partnerID=8YFLogxK

U2 - 10.1063/1.4807394

DO - 10.1063/1.4807394

M3 - 文章

AN - SCOPUS:84878344756

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203103

ER -

Negative compressibility observed in graphene containing resonant impurities

Abstract

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