Negative quantum capacitance induced by midgap states in single-layer graphene

Lin Wang, Yang Wang, Xiaolong Chen, Wei Zhu, Chao Zhu, Zefei Wu, Yu Han, Mingwei Zhang, Wei Li, Yuheng He, Wei Xiong, Kam Tuen Law, Dangsheng Su, Ning Wang

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

Original languageEnglish
Article number2041
JournalScientific Reports
Volume3
DOIs
StatePublished - 2013
Externally publishedYes

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