Abstract
The electronic structures and optical properties of ZnS and ZnS:Er have been studied using the first-principles plane-wave pseudopotential method. The calculations show that the bandgap of ZnS:Er becomes narrow in the case of Er 3+-doping and a new intermediate band between valence band and conduction band is presented. Moreover, with the Er 3+ concentration increasing, the insulativity of ZnS:Er presents a decreasing trend, and the absorption spectra exhibit a red-shift, which are in agreement with the previous experimental results.
Original language | English |
---|---|
Pages (from-to) | 1913-1919 |
Number of pages | 7 |
Journal | Guangdianzi Jiguang/Journal of Optoelectronics Laser |
Volume | 23 |
Issue number | 10 |
State | Published - Oct 2012 |
Externally published | Yes |
Keywords
- Electronic structures
- First-principles
- Optical properties
- ZnS:Er