Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

Juqing Liu; Zongyou Yin; Xiehong Cao; Fei Zhao; Anping Lin; Linghai Xie; Quli Fan; Freddy Boey; Hua Zhang; Wei Huang

doi:10.1021/nn100877s

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

Juqing Liu, Zongyou Yin, Xiehong Cao, Fei Zhao, Anping Lin, Linghai Xie, Quli Fan, Freddy Boey, Hua Zhang, Wei Huang

科研成果: 期刊稿件 › 文章 › 同行评审

224 引用（Scopus）

摘要

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10⁴ - 10 ⁵) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

源语言	英语
页（从-至）	3987-3992
页数	6
期刊	ACS Nano
卷	4
期	7
DOI	https://doi.org/10.1021/nn100877s
出版状态	已出版 - 27 7月 2010
已对外发布	是

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@article{c877230080d74c48b678d6d1242f3834,

title = "Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes",

abstract = "A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104 - 10 5) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.",

keywords = "bulk heterojunction, polymer memory, reduced graphene oxide, sheet resistance, write-once-read-manytimes",

author = "Juqing Liu and Zongyou Yin and Xiehong Cao and Fei Zhao and Anping Lin and Linghai Xie and Quli Fan and Freddy Boey and Hua Zhang and Wei Huang",

year = "2010",

month = jul,

day = "27",

doi = "10.1021/nn100877s",

language = "英语",

volume = "4",

pages = "3987--3992",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

AU - Liu, Juqing

AU - Yin, Zongyou

AU - Cao, Xiehong

AU - Zhao, Fei

AU - Lin, Anping

AU - Xie, Linghai

AU - Fan, Quli

AU - Boey, Freddy

AU - Zhang, Hua

AU - Huang, Wei

PY - 2010/7/27

Y1 - 2010/7/27

N2 - A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104 - 10 5) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

AB - A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104 - 10 5) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

KW - bulk heterojunction

KW - polymer memory

KW - reduced graphene oxide

KW - sheet resistance

KW - write-once-read-manytimes

UR - http://www.scopus.com/inward/record.url?scp=77955547629&partnerID=8YFLogxK

U2 - 10.1021/nn100877s

DO - 10.1021/nn100877s

M3 - 文章

C2 - 20540553

AN - SCOPUS:77955547629

SN - 1936-0851

VL - 4

SP - 3987

EP - 3992

JO - ACS Nano

JF - ACS Nano

IS - 7

ER -

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

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