Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan; David Bérardan; Lidong Zhao; Céline Barreteau; Nita Dragoe

doi:10.1063/1.4775593

Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan, David Bérardan, Lidong Zhao, Céline Barreteau, Nita Dragoe

Institut de Chimie Moléculaire et des Matériaux d'Orsay

科研成果: 期刊稿件 › 文章 › 同行评审

102 引用（Scopus）

摘要

The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi_1-xPb_xCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi_1- _xPb_xCuSeO (x = 0.03) reaches 5.3 μW cm^-1 K^-2 at 873 K. The influence of Pb²⁺ doping on the electronic structure is the same as the one obtained with Sr²⁺, however, the decrease of the holes mobility is reduced as compared to Sr ²⁺ doping, which could be beneficial to the thermoelectric performances.

源语言	英语
文章编号	023902
期刊	Applied Physics Letters
卷	102
期	2
DOI	https://doi.org/10.1063/1.4775593
出版状态	已出版 - 14 1月 2013
已对外发布	是

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abstract = "The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.",

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AU - Dragoe, Nita

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N2 - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

AB - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

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Influence of Pb doping on the electrical transport properties of BiCuSeO

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