Synthesis and characterizaton of high-quality GaN nanorods with triangular cross section

High-quality GaN nanorods with triangular cross section were synthesized via a simple chloride-assisted vapor phase epitaxy method. High-resolution transmission electron microscopic observations show that the synthesized GaN nanorods are single crystal with wurtzite hexagonal structure. Raman and photoluminescence measurements were also carried out to study the optical properties of the as-prepared GaN nanorods, which suggests the potential applications in optoelectronic devices.