摘要
Gallium phosphide nanotubes with zinc blende structure were synthesized for the first time. The as-prepared GaP nanotubes are polycrystalline with diameters of 30-120 nm and occasionally partially filled. The growth has been reasonably proposed to follow vapor-liquid-solid (VLS) mechanism. The integration of the nanotubular structure with the unique intrinsic semiconducting properties of GaP might bring GaP nanotubes some novel optical and electronic properties and applications.
源语言 | 英语 |
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页(从-至) | 19719-19722 |
页数 | 4 |
期刊 | Journal of Physical Chemistry B |
卷 | 109 |
期 | 42 |
DOI | |
出版状态 | 已出版 - 27 10月 2005 |