The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures

L. Pan; X. Y. Qin; M. Liu

doi:10.1016/j.ssc.2009.11.031

The effects of iodine doping on the thermoelectric properties of Zn₄ Sb₃ at low temperatures

L. Pan, X. Y. Qin, M. Liu

CAS - Institute of Solid State Physics

科研成果: 期刊稿件 › 文章 › 同行评审

10 引用（Scopus）

摘要

The thermoelectric properties of iodine-doped compounds Zn₄(Sb_1-xI_x)₃ (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn₄(Sb_0.995I_0.005)₃ reduced remarkably as compared with that of Zn₄Sb₃ due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn₄(Sb_0.995I_0.005)₃ exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn₄Sb₃ obtained in the present study at 300 K.

源语言	英语
页（从-至）	346-349
页数	4
期刊	Solid State Communications
卷	150
期	7-8
DOI	https://doi.org/10.1016/j.ssc.2009.11.031
出版状态	已出版 - 2月 2010
已对外发布	是

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10.1016/j.ssc.2009.11.031

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title = "The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures",

abstract = "The thermoelectric properties of iodine-doped compounds Zn4(Sb1-xIx)3 (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn4(Sb0.995I0.005)3 reduced remarkably as compared with that of Zn4Sb3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn4(Sb0.995I0.005)3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn4Sb3 obtained in the present study at 300 K.",

keywords = "A. Semiconductors, D. Thermoelectric, E. Hot-pressing",

author = "L. Pan and Qin, {X. Y.} and M. Liu",

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doi = "10.1016/j.ssc.2009.11.031",

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T1 - The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures

AU - Pan, L.

AU - Qin, X. Y.

AU - Liu, M.

PY - 2010/2

Y1 - 2010/2

N2 - The thermoelectric properties of iodine-doped compounds Zn4(Sb1-xIx)3 (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn4(Sb0.995I0.005)3 reduced remarkably as compared with that of Zn4Sb3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn4(Sb0.995I0.005)3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn4Sb3 obtained in the present study at 300 K.

AB - The thermoelectric properties of iodine-doped compounds Zn4(Sb1-xIx)3 (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn4(Sb0.995I0.005)3 reduced remarkably as compared with that of Zn4Sb3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn4(Sb0.995I0.005)3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn4Sb3 obtained in the present study at 300 K.

KW - A. Semiconductors

KW - D. Thermoelectric

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DO - 10.1016/j.ssc.2009.11.031

M3 - 文章

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SN - 0038-1098

VL - 150

SP - 346

EP - 349

JO - Solid State Communications

JF - Solid State Communications

IS - 7-8

ER -

The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures

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The effects of iodine doping on the thermoelectric properties of Zn₄ Sb₃ at low temperatures