Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Zhu Zhu Du; Wen Li; Wei Ai; Qiang Tai; Ling Hai Xie; Yong Cao; Ju Qing Liu; Ming Dong Yi; Hai Feng Ling; Zeng Hui Li; Wei Huang

doi:10.1039/c3ra43819h

Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Zhu Zhu Du, Wen Li, Wei Ai, Qiang Tai, Ling Hai Xie, Yong Cao, Ju Qing Liu, Ming Dong Yi, Hai Feng Ling, Zeng Hui Li, Wei Huang

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 10⁴ compared to that of the precursor, graphene oxide (GO).

Original language	English
Pages (from-to)	25788-25791
Number of pages	4
Journal	RSC Advances
Volume	3
Issue number	48
DOIs	https://doi.org/10.1039/c3ra43819h
State	Published - 28 Dec 2013
Externally published	Yes

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title = "Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices",

abstract = "A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).",

author = "Du, {Zhu Zhu} and Wen Li and Wei Ai and Qiang Tai and Xie, {Ling Hai} and Yong Cao and Liu, {Ju Qing} and Yi, {Ming Dong} and Ling, {Hai Feng} and Li, {Zeng Hui} and Wei Huang",

year = "2013",

month = dec,

day = "28",

doi = "10.1039/c3ra43819h",

language = "英语",

volume = "3",

pages = "25788--25791",

journal = "RSC Advances",

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TY - JOUR

T1 - Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

AU - Du, Zhu Zhu

AU - Li, Wen

AU - Ai, Wei

AU - Tai, Qiang

AU - Xie, Ling Hai

AU - Cao, Yong

AU - Liu, Ju Qing

AU - Yi, Ming Dong

AU - Ling, Hai Feng

AU - Li, Zeng Hui

AU - Huang, Wei

PY - 2013/12/28

Y1 - 2013/12/28

N2 - A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).

AB - A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).

UR - http://www.scopus.com/inward/record.url?scp=84887925629&partnerID=8YFLogxK

U2 - 10.1039/c3ra43819h

DO - 10.1039/c3ra43819h

M3 - 文章

AN - SCOPUS:84887925629

SN - 2046-2069

VL - 3

SP - 25788

EP - 25791

JO - RSC Advances

JF - RSC Advances

IS - 48

ER -

Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Abstract

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