Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Zhu Zhu Du; Wen Li; Wei Ai; Qiang Tai; Ling Hai Xie; Yong Cao; Ju Qing Liu; Ming Dong Yi; Hai Feng Ling; Zeng Hui Li; Wei Huang

doi:10.1039/c3ra43819h

Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Zhu Zhu Du, Wen Li, Wei Ai, Qiang Tai, Ling Hai Xie, Yong Cao, Ju Qing Liu, Ming Dong Yi, Hai Feng Ling, Zeng Hui Li, Wei Huang

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19 引用（Scopus）

摘要

A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 10⁴ compared to that of the precursor, graphene oxide (GO).

源语言	英语
页（从-至）	25788-25791
页数	4
期刊	RSC Advances
卷	3
期	48
DOI	https://doi.org/10.1039/c3ra43819h
出版状态	已出版 - 28 12月 2013
已对外发布	是

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abstract = "A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).",

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AU - Du, Zhu Zhu

AU - Li, Wen

AU - Ai, Wei

AU - Tai, Qiang

AU - Xie, Ling Hai

AU - Cao, Yong

AU - Liu, Ju Qing

AU - Yi, Ming Dong

AU - Ling, Hai Feng

AU - Li, Zeng Hui

AU - Huang, Wei

PY - 2013/12/28

Y1 - 2013/12/28

N2 - A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).

AB - A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 104 compared to that of the precursor, graphene oxide (GO).

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Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

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