Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process

Yuheng Gao; Yang Wang; Lin Pan; Changchun Chen; Pengan Zong; Yifeng Wang

doi:10.1016/j.matlet.2021.131291

Enhancing thermoelectric performance of Bi₂O₂Se by W-doping with the shear exfoliation- restacking process

Yuheng Gao, Yang Wang, Lin Pan, Changchun Chen, Pengan Zong, Yifeng Wang

College of Materials Science and Engineering

Nanjing Tech University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi₂O₂Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi_1.98W_0.02O₂Se was restricted to 0.6 Wm⁻¹ K⁻¹ at 770 K. Consequently, a maximum ZT value of Bi_1.98W_0.02O₂Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi₂O₂Se can be further optimized by W-doping with the shear exfoliation-restacking process.

Original language	English
Article number	131291
Journal	Materials Letters
Volume	308
DOIs	https://doi.org/10.1016/j.matlet.2021.131291
State	Published - 1 Feb 2022

Keywords

Ceramics
Electrical properties
Thermal properties

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10.1016/j.matlet.2021.131291

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@article{dd3c7c2b1d0b4038859557229bb641de,

title = "Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process",

abstract = "In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.",

keywords = "Ceramics, Electrical properties, Thermal properties",

author = "Yuheng Gao and Yang Wang and Lin Pan and Changchun Chen and Pengan Zong and Yifeng Wang",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2022",

month = feb,

day = "1",

doi = "10.1016/j.matlet.2021.131291",

language = "英语",

volume = "308",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process

AU - Gao, Yuheng

AU - Wang, Yang

AU - Pan, Lin

AU - Chen, Changchun

AU - Zong, Pengan

AU - Wang, Yifeng

PY - 2022/2/1

Y1 - 2022/2/1

N2 - In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.

AB - In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.

KW - Ceramics

KW - Electrical properties

KW - Thermal properties

UR - http://www.scopus.com/inward/record.url?scp=85119253331&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2021.131291

DO - 10.1016/j.matlet.2021.131291

M3 - 文章

AN - SCOPUS:85119253331

SN - 0167-577X

VL - 308

JO - Materials Letters

JF - Materials Letters

M1 - 131291

ER -

Enhancing thermoelectric performance of Bi₂O₂Se by W-doping with the shear exfoliation- restacking process

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Keywords

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