Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process

Yuheng Gao; Yang Wang; Lin Pan; Changchun Chen; Pengan Zong; Yifeng Wang

doi:10.1016/j.matlet.2021.131291

Enhancing thermoelectric performance of Bi₂O₂Se by W-doping with the shear exfoliation- restacking process

Yuheng Gao, Yang Wang, Lin Pan, Changchun Chen, Pengan Zong, Yifeng Wang

材料科学与工程学院

Nanjing Tech University

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi₂O₂Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi_1.98W_0.02O₂Se was restricted to 0.6 Wm⁻¹ K⁻¹ at 770 K. Consequently, a maximum ZT value of Bi_1.98W_0.02O₂Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi₂O₂Se can be further optimized by W-doping with the shear exfoliation-restacking process.

源语言	英语
文章编号	131291
期刊	Materials Letters
卷	308
DOI	https://doi.org/10.1016/j.matlet.2021.131291
出版状态	已出版 - 1 2月 2022

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10.1016/j.matlet.2021.131291

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title = "Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process",

abstract = "In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.",

keywords = "Ceramics, Electrical properties, Thermal properties",

author = "Yuheng Gao and Yang Wang and Lin Pan and Changchun Chen and Pengan Zong and Yifeng Wang",

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year = "2022",

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doi = "10.1016/j.matlet.2021.131291",

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T1 - Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process

AU - Gao, Yuheng

AU - Wang, Yang

AU - Pan, Lin

AU - Chen, Changchun

AU - Zong, Pengan

AU - Wang, Yifeng

PY - 2022/2/1

Y1 - 2022/2/1

N2 - In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.

AB - In this study, W-doping with the shear exfoliation- restacking process was used to optimize the thermoelectric properties of Bi2O2Se. It is noted that W-doping with the shear exfoliation- restacking process can synergistically improve carrier concentration and mobility, thus a higher electrical conductivity was obtained. In addition, total thermal conductivity of Bi1.98W0.02O2Se was restricted to 0.6 Wm−1 K−1 at 770 K. Consequently, a maximum ZT value of Bi1.98W0.02O2Se is raised to 0.62 at 773 K. The results show that the thermoelectric properties of Bi2O2Se can be further optimized by W-doping with the shear exfoliation-restacking process.

KW - Ceramics

KW - Electrical properties

KW - Thermal properties

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DO - 10.1016/j.matlet.2021.131291

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JO - Materials Letters

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Enhancing thermoelectric performance of Bi2O2Se by W-doping with the shear exfoliation- restacking process

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Enhancing thermoelectric performance of Bi₂O₂Se by W-doping with the shear exfoliation- restacking process