Abstract
Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor-liquid-solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.
Original language | English |
---|---|
Pages (from-to) | 2024-2027 |
Number of pages | 4 |
Journal | Journal of Materials Chemistry |
Volume | 13 |
Issue number | 8 |
DOIs | |
State | Published - 1 Aug 2003 |