Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires

Qiang Wu; Zheng Hu; Xizhang Wang; Yinong Lu; Kaifu Huo; Shaozhi Deng; Ningsheng Xu; Bo Shen; Rong Zhang; Yi Chen

doi:10.1039/b303987k

Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires

Qiang Wu, Zheng Hu, Xizhang Wang, Yinong Lu, Kaifu Huo, Shaozhi Deng, Ningsheng Xu, Bo Shen, Rong Zhang, Yi Chen

材料科学与工程学院

科研成果: 期刊稿件 › 文章 › 同行评审

138 引用（Scopus）

摘要

Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor-liquid-solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.

源语言	英语
页（从-至）	2024-2027
页数	4
期刊	Journal of Materials Chemistry
卷	13
期	8
DOI	https://doi.org/10.1039/b303987k
出版状态	已出版 - 1 8月 2003

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T1 - Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires

AU - Wu, Qiang

AU - Hu, Zheng

AU - Wang, Xizhang

AU - Lu, Yinong

AU - Huo, Kaifu

AU - Deng, Shaozhi

AU - Xu, Ningsheng

AU - Shen, Bo

AU - Zhang, Rong

AU - Chen, Yi

PY - 2003/8/1

Y1 - 2003/8/1

N2 - Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor-liquid-solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.

AB - Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor-liquid-solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.

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M3 - 文章

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VL - 13

SP - 2024

EP - 2027

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 8

ER -

Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires

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