Growth of Bi1.5MgNb1.5O7 thin films on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering

Hong Gao, Yinong Lu, Yunfei Liu, Chengjian Ma, Hao Qian, Jianxiang Ding

Research output: Contribution to journalArticlepeer-review

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Abstract

In this letter, bismuth magnesium niobate (Bi1.5MgNb 1.5O7, BMN) thin films were deposited on Pt/Ti/SiO 2/Si substrates by using radio-frequency magnetron sputtering at various substrate temperatures. Based on the phase compositions and microstructures of these samples, we discussed the nucleation and growth of the BMN thin films and how the substrate temperature influenced these processes. The thin film begins to crystallize at 450 C, and the annealed films were all composed of the cubic pyrochlore phase with a strong (222)-preferred orientation. The film deposited at 450 C exhibited a large dielectric constant of 173, and a tunability of 26.6 % was obtained at a max dc bias field of 0.8 MV/cm.

Original languageEnglish
Pages (from-to)1474-1479
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume25
Issue number3
DOIs
StatePublished - Mar 2014

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