TY - JOUR
T1 - Growth of Bi1.5MgNb1.5O7 thin films on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering
AU - Gao, Hong
AU - Lu, Yinong
AU - Liu, Yunfei
AU - Ma, Chengjian
AU - Qian, Hao
AU - Ding, Jianxiang
PY - 2014/3
Y1 - 2014/3
N2 - In this letter, bismuth magnesium niobate (Bi1.5MgNb 1.5O7, BMN) thin films were deposited on Pt/Ti/SiO 2/Si substrates by using radio-frequency magnetron sputtering at various substrate temperatures. Based on the phase compositions and microstructures of these samples, we discussed the nucleation and growth of the BMN thin films and how the substrate temperature influenced these processes. The thin film begins to crystallize at 450 C, and the annealed films were all composed of the cubic pyrochlore phase with a strong (222)-preferred orientation. The film deposited at 450 C exhibited a large dielectric constant of 173, and a tunability of 26.6 % was obtained at a max dc bias field of 0.8 MV/cm.
AB - In this letter, bismuth magnesium niobate (Bi1.5MgNb 1.5O7, BMN) thin films were deposited on Pt/Ti/SiO 2/Si substrates by using radio-frequency magnetron sputtering at various substrate temperatures. Based on the phase compositions and microstructures of these samples, we discussed the nucleation and growth of the BMN thin films and how the substrate temperature influenced these processes. The thin film begins to crystallize at 450 C, and the annealed films were all composed of the cubic pyrochlore phase with a strong (222)-preferred orientation. The film deposited at 450 C exhibited a large dielectric constant of 173, and a tunability of 26.6 % was obtained at a max dc bias field of 0.8 MV/cm.
UR - http://www.scopus.com/inward/record.url?scp=84894658437&partnerID=8YFLogxK
U2 - 10.1007/s10854-014-1754-0
DO - 10.1007/s10854-014-1754-0
M3 - 文章
AN - SCOPUS:84894658437
SN - 0957-4522
VL - 25
SP - 1474
EP - 1479
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -