Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High-Performance Flash Memory

Yuhang Yin; Zhe Zhou; Xiaojing Wang; Huiwu Mao; Chaoyi Ban; Yuanbo Chen; Juqing Liu; Zhengdong Liu; Wei Huang

doi:10.1021/acsami.9b16778

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High-Performance Flash Memory

Yuhang Yin, Zhe Zhou, Xiaojing Wang, Huiwu Mao, Chaoyi Ban, Yuanbo Chen, Juqing Liu, Zhengdong Liu, Wei Huang

SCHOOL OF FLEXIBLE ELECTRONICS(FUTURE TECHNOLOGIES)|INSTITUTE OF ADVANCED MATERIALS(IAM)

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report the design and preparation of hierarchical hollow-pore nanostructure bilayer conjugated polymer films for high-performance resistive memory devices. By taking the merits of chemical and structural stabilities of a two-dimensional conjugated microporous polymer (2D CMP), a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with a hollow surface was spin-coated onto 2D CMP nanofilm directly, constructing a bilayer heterojunction. A two-terminal diode with a configuration of indium tin oxide/2D CMP/hollow MEH-PPV/Al was fabricated by employing the prepared bilayer heterojunction. The device poses flash feature with a high on/off ratio (>10⁵) and a long retention time (>3.0 × 10⁴ s), which is higher than that of most of the reported conjugated polymers memories. Our work offers a general guideline to construct high on/off ratio polymer memories via hierarchical nanostructure engineering in memristive layer.

Original language	English
Pages (from-to)	1103-1109
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	1
DOIs	https://doi.org/10.1021/acsami.9b16778
State	Published - 8 Jan 2020

Keywords

bilayer heterojunction
conjugated polymer
flash memory
hierarchical hollow-pore nanostructure
on/off ratio

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title = "Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High-Performance Flash Memory",

abstract = "We report the design and preparation of hierarchical hollow-pore nanostructure bilayer conjugated polymer films for high-performance resistive memory devices. By taking the merits of chemical and structural stabilities of a two-dimensional conjugated microporous polymer (2D CMP), a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with a hollow surface was spin-coated onto 2D CMP nanofilm directly, constructing a bilayer heterojunction. A two-terminal diode with a configuration of indium tin oxide/2D CMP/hollow MEH-PPV/Al was fabricated by employing the prepared bilayer heterojunction. The device poses flash feature with a high on/off ratio (>105) and a long retention time (>3.0 × 104 s), which is higher than that of most of the reported conjugated polymers memories. Our work offers a general guideline to construct high on/off ratio polymer memories via hierarchical nanostructure engineering in memristive layer.",

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author = "Yuhang Yin and Zhe Zhou and Xiaojing Wang and Huiwu Mao and Chaoyi Ban and Yuanbo Chen and Juqing Liu and Zhengdong Liu and Wei Huang",

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AU - Yin, Yuhang

AU - Zhou, Zhe

AU - Wang, Xiaojing

AU - Mao, Huiwu

AU - Ban, Chaoyi

AU - Chen, Yuanbo

AU - Liu, Juqing

AU - Liu, Zhengdong

AU - Huang, Wei

PY - 2020/1/8

Y1 - 2020/1/8

N2 - We report the design and preparation of hierarchical hollow-pore nanostructure bilayer conjugated polymer films for high-performance resistive memory devices. By taking the merits of chemical and structural stabilities of a two-dimensional conjugated microporous polymer (2D CMP), a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with a hollow surface was spin-coated onto 2D CMP nanofilm directly, constructing a bilayer heterojunction. A two-terminal diode with a configuration of indium tin oxide/2D CMP/hollow MEH-PPV/Al was fabricated by employing the prepared bilayer heterojunction. The device poses flash feature with a high on/off ratio (>105) and a long retention time (>3.0 × 104 s), which is higher than that of most of the reported conjugated polymers memories. Our work offers a general guideline to construct high on/off ratio polymer memories via hierarchical nanostructure engineering in memristive layer.

AB - We report the design and preparation of hierarchical hollow-pore nanostructure bilayer conjugated polymer films for high-performance resistive memory devices. By taking the merits of chemical and structural stabilities of a two-dimensional conjugated microporous polymer (2D CMP), a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with a hollow surface was spin-coated onto 2D CMP nanofilm directly, constructing a bilayer heterojunction. A two-terminal diode with a configuration of indium tin oxide/2D CMP/hollow MEH-PPV/Al was fabricated by employing the prepared bilayer heterojunction. The device poses flash feature with a high on/off ratio (>105) and a long retention time (>3.0 × 104 s), which is higher than that of most of the reported conjugated polymers memories. Our work offers a general guideline to construct high on/off ratio polymer memories via hierarchical nanostructure engineering in memristive layer.

KW - bilayer heterojunction

KW - conjugated polymer

KW - flash memory

KW - hierarchical hollow-pore nanostructure

KW - on/off ratio

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Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High-Performance Flash Memory

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