摘要
We report the design and preparation of hierarchical hollow-pore nanostructure bilayer conjugated polymer films for high-performance resistive memory devices. By taking the merits of chemical and structural stabilities of a two-dimensional conjugated microporous polymer (2D CMP), a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with a hollow surface was spin-coated onto 2D CMP nanofilm directly, constructing a bilayer heterojunction. A two-terminal diode with a configuration of indium tin oxide/2D CMP/hollow MEH-PPV/Al was fabricated by employing the prepared bilayer heterojunction. The device poses flash feature with a high on/off ratio (>105) and a long retention time (>3.0 × 104 s), which is higher than that of most of the reported conjugated polymers memories. Our work offers a general guideline to construct high on/off ratio polymer memories via hierarchical nanostructure engineering in memristive layer.
源语言 | 英语 |
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页(从-至) | 1103-1109 |
页数 | 7 |
期刊 | ACS Applied Materials and Interfaces |
卷 | 12 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 8 1月 2020 |