Abstract
SiCw-SiC foams with hollow skeleton were synthesized by a simple procedure that consisted of the chemical vapor infiltration (CVI) and oxidation process. Flexible carbon foam was employed as CVI template. A typical structure of SiCw-SiC foams consisting of SiC supporter with hollow skeleton structure accompanying numerous crooked SiC whiskers was obtained after burning out carbon skeleton of the carbon foam during oxidation process. SiCw-SiC foams have a density of 0.11 ≤ ρ ≤ 0.12 g/cm3, porosity ≥ 96% and a thermal conductivity at room temperature between 0.040 and 0.075 W/m·K. Thermal conductivity of the SiCw-SiC foams moderately increased with elevation of temperature, indicating that these foams with larger amount of whiskers exhibit excellent thermal insulation property at elevated temperature.
Original language | English |
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Pages (from-to) | 296-301 |
Number of pages | 6 |
Journal | Materials Characterization |
Volume | 134 |
DOIs | |
State | Published - Dec 2017 |
Keywords
- Chemical vapor infiltration
- Foams
- SiC
- Thermal conductivity
- Whiskers