摘要
SiCw-SiC foams with hollow skeleton were synthesized by a simple procedure that consisted of the chemical vapor infiltration (CVI) and oxidation process. Flexible carbon foam was employed as CVI template. A typical structure of SiCw-SiC foams consisting of SiC supporter with hollow skeleton structure accompanying numerous crooked SiC whiskers was obtained after burning out carbon skeleton of the carbon foam during oxidation process. SiCw-SiC foams have a density of 0.11 ≤ ρ ≤ 0.12 g/cm3, porosity ≥ 96% and a thermal conductivity at room temperature between 0.040 and 0.075 W/m·K. Thermal conductivity of the SiCw-SiC foams moderately increased with elevation of temperature, indicating that these foams with larger amount of whiskers exhibit excellent thermal insulation property at elevated temperature.
源语言 | 英语 |
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页(从-至) | 296-301 |
页数 | 6 |
期刊 | Materials Characterization |
卷 | 134 |
DOI | |
出版状态 | 已出版 - 12月 2017 |