Combined Schottky junction and doping effect in Cd_xZn_1-xS@Au/BiVO₄ Z-Scheme photocatalyst with boosted carriers charge separation for CO₂ reduction by H₂O

A Z-scheme photosystems combining Schottky junction and loading of applicable bandgap semiconductor is beneficial for enhancing the charge carriers’ separation/transfer as well as maintain their excellent redox ability. Here, Cd_xZn_1-xS@Au was in-situ deposited on the (0 1 0) facets of BiVO₄ taking Au as a bridge for constructing a sandwich structure Cd_xZn_1-xS@Au/BiVO₄ Z-scheme photocatalyst. The electrons in BiVO₄ (0 1 0) migrate unidirectionally to Au nanoparticles across the Schottky junction and effectively suppress opposite electrons flow, then be captured by the excited holes in Cd_xZn_1-xS. Furthermore, Zn-doping also contributes to an appropriate redox ability and charge carriers separation. Benefiting from the dual-facilitated effects, the ternary Cd_xZn_1-xS@Au/BiVO₄ exhibited superior photocatalytic activity for CO₂ reduction under visible light irradiation using H₂O as a reducing agent, as compared with CdS and CdS@Au/BiVO₄. Furthermore, the intermediate product HCOO* fixed on the surface of Cd_xZn_1-xS@Au/BiVO₄ is identified by in-situ FT-IR, playing a key role in the conversion of CO₂ to CO and then improve photocatalytic selectivity.