A study on the sign inversion behavior of organic magnetoresistance

Tianyou Zhang; Junqing Zhao; Xingwu Yan; Qiming Peng; Gang Fu

doi:10.1109/LED.2012.2237540

A study on the sign inversion behavior of organic magnetoresistance

Tianyou Zhang, Junqing Zhao, Xingwu Yan, Qiming Peng, Gang Fu

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.

Original language	English
Article number	6414593
Pages (from-to)	450-452
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	3
DOIs	https://doi.org/10.1109/LED.2012.2237540
State	Published - 2013
Externally published	Yes

Keywords

Hopping transport
organic magnetoresistance (OMR)
percolation theory
space-charge-limited current (SCLC)

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10.1109/LED.2012.2237540

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title = "A study on the sign inversion behavior of organic magnetoresistance",

abstract = "We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.",

keywords = "Hopping transport, organic magnetoresistance (OMR), percolation theory, space-charge-limited current (SCLC)",

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T1 - A study on the sign inversion behavior of organic magnetoresistance

AU - Zhang, Tianyou

AU - Zhao, Junqing

AU - Yan, Xingwu

AU - Peng, Qiming

AU - Fu, Gang

PY - 2013

Y1 - 2013

N2 - We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.

AB - We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.

KW - Hopping transport

KW - organic magnetoresistance (OMR)

KW - percolation theory

KW - space-charge-limited current (SCLC)

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DO - 10.1109/LED.2012.2237540

M3 - 文章

AN - SCOPUS:84874655273

SN - 0741-3106

VL - 34

SP - 450

EP - 452

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 6414593

ER -

A study on the sign inversion behavior of organic magnetoresistance

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Keywords

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