TY - JOUR
T1 - A study on the sign inversion behavior of organic magnetoresistance
AU - Zhang, Tianyou
AU - Zhao, Junqing
AU - Yan, Xingwu
AU - Peng, Qiming
AU - Fu, Gang
PY - 2013
Y1 - 2013
N2 - We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.
AB - We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.
KW - Hopping transport
KW - organic magnetoresistance (OMR)
KW - percolation theory
KW - space-charge-limited current (SCLC)
UR - http://www.scopus.com/inward/record.url?scp=84874655273&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2237540
DO - 10.1109/LED.2012.2237540
M3 - 文章
AN - SCOPUS:84874655273
SN - 0741-3106
VL - 34
SP - 450
EP - 452
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
M1 - 6414593
ER -